PBLS6005D,115 datasheet

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Маркировка

PBLS6005D,115
Производитель

NXP Semiconductors
Описание

NXP Semiconductors PBLS6005D,115 Collector- Emitter Voltage Vceo Max: 50 V at NPN, 60 V at PNP Configuration: Dual Current - Collector (ic) (max): 100mA, 700mA Current - Collector Cutoff (max): 1?µA, 100nA Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 5V / 150 @ 500mA, 5V Frequency - Transition: 185MHz ID_COMPONENTS: 3593323 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-74-6 Peak Dc Collector Current: 100 mA at NPN, 1000 mA at PNP Power - Max: 600mW Resistor - Base (r1) (ohms): 47K Resistor - Emitter Base (r2) (ohms): 47K Series: - Transistor Polarity: NPN/PNP Transistor Type: 1 NPN Pre-Biased, 1 PNP Typical Input Resistor: 47 KOhms at NPN Typical Resistor Ratio: 1 at NPN Vce Saturation (max) @ Ib, Ic: 150mV @ 500?µA, 10mA / 340mV @ 100mA, 1A Voltage - Collector Emitter Breakdown (max): 50V, 60V Product Category: Transistors Switching - Resistor Biased RoHS: yes Collector- Emitter Voltage VCEO Max: 50 V at NPN, 60 V at PNP Peak DC Collector Current: 100 mA at NPN, 1000 mA at PNP Factory Pack Quantity: 3000 Part # Aliases: PBLS6005D T/R Other Names: 934059337115, PBLS6005D T/R
Количество страниц

16 шт.
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